Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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Morie Takashi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Murota J
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Murota Junichi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane
- Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane
- Molybdenum Film Formation by Low Pressure Chemical Vapor Deposition