Molybdenum Film Formation by Low Pressure Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• A new low pressure chemical vapor deposition apparatus for molybdenum film formation by the hydrogen reduction of molybdenum pentachloride is developed. The apparatus realizes the uniformity of film thickness within ±5% for 25 wafers per batch and molybdenum film formation without oxidation. It is found that the deposition rate is controlled by surface reaction up to a higher temperature than that under atmospheric pressure and is proportional to the 3/2 power of hydrogen partial pressure in the region of surface reaction.

• 社団法人応用物理学会の論文
• 1983-10-20

著者

• Murota Junichi

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yasuda Kazumitsu

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane
• Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane
• Molybdenum Film Formation by Low Pressure Chemical Vapor Deposition

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