Photoluminescence Related to Dislocations in Annealed Czochralski-Grown Si Crystals

スポンサーリンク

概要

• 論文の詳細を見る

• The deep level photoluminescence at 4.2 K and 77 K from annealed Czochralski-grown Si crystals is investigated in relation to dislocations generated during the oxygen precipitation process. The appearance of the "rod-like defects" induces two broad bands at 0.81 and 0.88 eV. The generation of perfect dislocation loops punched out from oxygen precipitates introduces two strong and sharp lines at 0.808 and 0.874 eV. The characteristics of these signals are discussed in comparison with the dislocation-related lines observed in plastically deformed Si crystals.

• 社団法人応用物理学会の論文
• 1983-09-20

著者

• Matsushita Yoshiaki

  Semiconductor Device Engineering Laboratory Toshiba Corporation

• TAJIMA Michio

  Max-Planck-Institut fur Festkorperforschung and Electrotechnical Laboratory

関連論文

• Quantum Chemical Analysis of Metal Adsorption Mechanism onto Silicon Surface in Cleaning Solution
• Photoluminescence Related to Dislocations in Annealed Czochralski-Grown Si Crystals
• Deep Level Luminescence Ralated to Thermal Donors in Silicon

スポンサーリンク