Deep Level Luminescence Ralated to Thermal Donors in Silicon

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概要

• 論文の詳細を見る

• We investigate the origin of the deep level luminescence from Czochralski-grown Si crystals annealed at about 450℃ in relation to "thermal donors" (TD's). A sharp line appears at 0.767 eV in luminescence spectra at 4.2 K and 77 K. The appearance condition of this line coincides with that of the TD's. The intensity of the line measured at 77 K reflects the TD concentration. We conclude that the 0.767-eV line is due to a certain form of the oxygen agglomerates transformed from the oxygen complexes responsible for the TD's.

• 社団法人応用物理学会の論文
• 1983-09-20

著者

• TAJIMA Michio

  Max-Planck-Institut fur Festkorperforschung and Electrotechnical Laboratory

• Huber D.

  Wacker Chemitronic

• STALLHOFER P.

  Wacker Chemitronic

• Tajima Michio

  Max-planck-institut Fur Festkorperforschung:(present Address)electrotechnical Laboratory

関連論文

• Photoluminescence Related to Dislocations in Annealed Czochralski-Grown Si Crystals
• Deep Level Luminescence Ralated to Thermal Donors in Silicon
• Advances in Silicon Crystal Properties : C-3: CRYSTAL TECHNOLOGY

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