Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes

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概要

• 論文の詳細を見る

• The MBE-grown ZnSe layer on GaAs (100) with an optimum doping of Ga is found to exhibit an extremely low resistivity and a strong blue near-band-gap photoluminescence (PL) emission (〜4610 Å) without any deep broad emissions at room temperature. At lower Ga-cell temperatures, the carrier concentration and blue PL emission intensity increases significantly owing to an increase in substitutional Ga atoms acting as donors. At higher Ga-cell temperatures, an excess incorporation of Ga results in a reduction of carrier concentration, a decrease in blue PL emission, and a marked increase in deep broad emission (〜5900 Å).

• 社団法人応用物理学会の論文
• 1982-06-20

著者

• NIINA Tatsuhiko

  Research Center, SANYO Electric Co., Ltd.

• Minato Tetsuo

  Research Center Sanyo Electric Co. Ltd.

• YONEDA Kiyoshi

  Research Center, Sanyo Electric Co., Ltd.

• Niina Tatsuhiko

  Research Center Sanyo Electric Co. Ltd.

• Niina Tatsuhiko

  Research Center Sanyo Electric Co. Lid.

• Yoneda Kiyoshi

  Research Center Sanyo Electric Co. Ltd.

関連論文

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• Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE
• Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes
• Rotating Boat System for Liquid Phase Epitaxial Growth of GaP Green Light-Emitting Diodes

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