Electronic States in Polythiophene and Poly(3-methylthiophene) Studied by Photoelectron Spectroscopy in Air : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
The difference of the energy of the top of the valence band in polythiophene and poly(3-methylthiophene) has been evaluated by photoelectron spectroscopy in air to be about 0.2 eV in coincidence with that obtained by cyclic voltammetry in electrolytes. In the doped state of poly(3-methylthiophene) with BF^-_4, the threshold energy of the photoemission has been found to decrease by about 0.4 eV compared with the undoped sample. This is discussed in terms of polaron state formation by doping.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
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YOSHINO Katsumi
Faculty of Engineering, Osaka University
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Yoshino Katsumi
Faculty Of Engineering Osaka University
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Yokoyama M
Osaka Univ. Osaka Jpn
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Yokoyama M
Material And Life Science Graduate School Of Engineering Osaka University:core Research For Evolutio
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MANDA Yasuhisa
Faculty of Engineering, Osaka University
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Manda Y
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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ONODA Mitsuyoshi
Faculty of Engineering, Osaka University
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YOKOYAMA Masaaki
Faculty of Engineering, Osaka University
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Onoda Mitsuyoshi
Faculty Of Engineering Himeji Institute Of Technology
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Yoshino Katsumi
Faculty Of Engineering Of Osaka University
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Yokoyama Masaaki
Faculty Of Engineering Osaka University
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