Charge Losses of N-Doped Trench Cells : Advanced III-V Compound Semiconductors and Silicon Devices(<Special Section>Solid State Devices and Materials 1)

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概要

• 論文の詳細を見る

• N-doped trench cells exhibit increased charge losses during the refresh time interval when the cell plate voltage is reduced below 2.5 V. This effect is attributed to tunneling of electrons from the valence band of the n-region into the conduction band thus contributing to the leakage current of the cell. This is verified by numerical simulations which indicate that tunneling will occur preferently at the upper corners of the trench. The tunneling current is calculated based on a modified WKB-approximation using 2D potential and imref distributions.

• 社団法人応用物理学会の論文
• 1988-11-20

著者

• Bergner W

  Corporate Research And Development Silicon Process Technology

• Bergner Wolfgang

  Siemens Ag Central Research And Development

• Kircher Roland

  Siemens Ag Central Research And Development

• Maly Rotraud

  Siemens Ag Central Research And Development

• RISCH Lothar

  Siemens AG, Central Research and Development

• Risch Lothar

  Siemens Ag Central Research And Development

関連論文

• Modeling of Band-to-Band Tunneling Mechanisms
• Charge Losses of N-Doped Trench Cells : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
• Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy

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