Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• The growth conditions in molecular beam epitaxy (MBE) were studied for the fabrication of vertical Si-metal-oxide-semiconductor field effect transistors (MOSFET) with channel lengths down to 50 nm. The short channel-length imposes severe constraints on the doping profile. MBE growth provided a steepness of 10 nm/dec for boron and 2 nm/dec for antimony. The sharpness of the doping profile was sustained throughout the process by keeping all process temperatures below 700℃. The high crystal quality and the well-defined doping profile was verified by the good performance of a triangular barrier diode. A vertical n-MOSFET with an estimated channel length of 50 nm was grown. The drain and gate characteristics were discussed for a source drain voltage regime from U_<sd>=0 V to 1 V.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• Eisele Ignaz

  Universitaet Der Bundeswehr Muenchen Department Of Electrical Engineering Institute Of Physics

• Gossner Harald

  Universitaet Der Bundeswehr Muenchen Department Of Electrical Engineering Institute Of Physics:sieme

• RISCH Lothar

  Siemens AG, Central Research and Development

• Risch Lothar

  Siemens Ag Central Research And Development

• Risch Lothar

  Siemens Ag Research Laboratories

関連論文

• Self-Organizing Growth of Nanometer Mesa Structures on Silicon (100) Substrates
• Charge Losses of N-Doped Trench Cells : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
• Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy

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