Modeling of Band-to-Band Tunneling Mechanisms

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概要

• 論文の詳細を見る

• Measurements and simulations are presented, which allow a better understanding of leakage mechanisms in reverse biased gated diodes. The model for the device simulation describes two mechanisms. In the high field regime the leakage current is identified as direct band-to-band tunneling. In the low field regime it is described as surface-state enhanced tunneling, which combines thermal activation of an electron to a surface-state with tunneling.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Bergner W

  Corporate Research And Development Silicon Process Technology

• Wolfgang Bergner

  Corporate Research And Development Silicon Process Technology

• Kircher R

  Corporate Research And Development Silicon Process Technology:(present Address) Research Institute O

• ROLAND Kircher

  Corporate Research and Development, Silicon Process Technology

関連論文

• Modeling of Band-to-Band Tunneling Mechanisms
• Charge Losses of N-Doped Trench Cells : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)

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