Quenching of Vacancies in Aluminum Interconnections on Semiconductor Devices

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概要

• 論文の詳細を見る

• The vacancy formation energy in Al-2 wt%Si interconnections on semiconductor devices with a SiN passivation layer is studied using the quenching technique. We find that the vacancy formation energy is 0.60±0.07 eV in the temperature range 200 to 300℃, while the theoretical calculation yields a value of 0.64 eV for bulk Al-2 wt%Si and 0.59 eV for the Al-2 wt%Si interconnection with a SiN passivation layer. The difference is attributed to the fact that the thermal expansion coefficient of aluminum is larger than that of SiN, so that the aluminum interconnection is strained due to the difference in the expansion. The strain enhances the generation of vacancies.

• 社団法人応用物理学会の論文
• 1998-01-15

著者

• Asada Kunihiro

  School Of Engineering University Of Tokyo:vlsi Design And Education Center University Of Tokyo

• Aoyagi Minoru

  Nissan Motor Co. Ltd.:school Of Engineering University Of Tokyo

• Aoyagi Minoru

  Nissan Motor Co. Ltd.

• Asada Kunihiro

  School Of Engineering The University Of Tokyo (vlsi Design And Education Center University Of Tokyo)

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• Vacancy Distribution in Aluminum Interconnections on Semiconductor Devices
• Quenching of Vacancies in Aluminum Interconnections on Semiconductor Devices

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