Effects of Oxygen Doping on the Electrical and Optical Properties of Sputtered ZnS:TbOF Electroluminescent Thin Films

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概要

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• The electrical and luminescent properties of green-color ZnS:TbOF thin-film electroluminescent devices have been investigated. It is shown that appropriate oxygen doping is an important factor in the improvement of the luminance. The high luminance achieved by oxygen doping is due not only to the efficiency improvement based on the formation of TbOF complex center but also to the increased amount of transported charges flowing through the active layers.

• 社団法人応用物理学会の論文
• 1989-12-20

著者

• Ohnishi Hideomi

  Faculty Of Engineering Ehime University

• OKAMOTO Kenji

  Fujitsu Limited

関連論文

• Photoluminescence of Eu^ and Eu^ Centers in CaS:Eu,Na Phosphors
• Effects of Oxygen Doping on the Electrical and Optical Properties of Sputtered ZnS:TbOF Electroluminescent Thin Films
• Oxygen Contamination in SrS:Ce Thin-Film Electroluminescent Devices : Optical Properties of Condensed Matter
• ZnS:TbOF Thin-Film Green Electroluminescent Panels Fabricated by Two-Target Sputtering

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