Contact between High-T_c Superconductor and Semiconducting Niobium-Doped SrTiO_3
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概要
- 論文の詳細を見る
The contact between a high-T_c superconductor of Er-Ba-Cu-O and a semiconductor of niobium-doped SrTiO_3 has been examined by current-voltage measurements. The rectifying characteristic has been observed at 277 K for a sample with niobium-0.05wt%-doped SrTiO_3. The breakdown voltage decreases with decreasing temperature or increasing niobium impurity concentration, and the temperature dependence of the breakdown voltage becomes more gradual with increasing niobium impurity concentration.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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FUKAZAWA Tokuumi
Central Research Laboratory, Hitachi, Ltd.
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Hasegawa Haruhiro
Central Research Laboratory Hitachi Ltd.
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Aida Toshiyuki
Central Research Laboratory Hitachi Ltd.
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Fukazawa Tokuumi
Central Research Laboratory Hitachi Ltd.
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