In Situ Growth of Superconducting Y-Ba-Cu-O Films on Si, SiO_2, GaAs and Cu/Ag by the High-Pressure DC Sputtering Process

概要

論文の詳細を見る
Superconducting Y-Ba-Cu-O thin films on Si, SiO_2, GaAs and Cu / Ag substrates have been reproducibly prepared by the high-pressure DC sputtering process without further annealing treatment. The targets were Y-Ba-Cu-O compounds made by the solid-state reaction. The substrate temperature was lower than 450℃. The films (0.6-2 μm) consist of predominantly the superconducting phase of Y_1Ba_2Cu_3O_x and impurity phases such as CuO or a mixture of CuO and Y_2Ba_1Cu_1O_5. The best superconductivity of the films on Si is Tc(onset)=95 K and Tc(zero)=70 K. There are no microcracks on the film surface, and the interdiffusion between film and Si substrate is limited.
社団法人応用物理学会の論文
1989-12-20