Defect Structures in InP Crystals by Laser Scanning Tomography
スポンサーリンク
概要
- 論文の詳細を見る
Laser-beam scanning tomography images are taken from various InP crystals. They all display a distribution of bright points which are shown to be statistically arranged along the crystallographic axes <100> and <110>. These microdefects are likely distributed along dislocations in such a way that small volumes or "cells" (typically 200-500 μm wide) are kept free from defects. It is shown that the density of defects varies with the doping of the material; lower densities were observed in Fe-doped InP crystals.
- 社団法人応用物理学会の論文
- 1987-08-20
著者
-
Gall P
Centre D'electronique De Montpellier (ua 391) Universite Des Sciences Et Techniques Du Languedo
-
GALL P.
Centre d'Electronique de Montpellier (UA 391), Universite des Sciences et Techniques du Languedoc
-
BONNAFE J.
Centre d'Electronique de Montpellier (UA 391), Universite des Sciences et Techniques du Languedoc
-
FILLARD J.
Centre d'Electronique de Montpellier (UA 391), Universite des Sciences et Techniques du Languadoc
-
BAROUDI A.
Centre d'Electronique de Montpellier (UA 391), Universite des Sciences et Techniques du Languadoc
-
Fillard Jp
Centre D'electronique De Montpellier (ua 391) Universite Des Sciences Et Techniques Du Languedo
-
Bonnafe J.
C.e.m.(centre D'electronique De Montpellier) U.s.t.l. Pl. E. Bataillon
-
GEORGE A.
Centre d'Electronique de Montpellier, Universite des Sciences et Techniques du Languedoc
-
Baroudi A.
Centre D'electronique De Montpellier (ua 391) Universite Des Sciences Et Techniques Du Languado
-
Fillard J.
Centre D' Etudes D' Electronique Des Solides (associe Au C. N. R. S.) Universite Des Siences Et Techniques Du Languedoc
-
GALL P.
Centre d'Electronique de Montpellier (UA 391), Universite des Sciences et Techniques du Languedoc
関連論文
- The Role of EL2 Centres in Infra Red Images of Defects in GaAs Materials
- Image Analysis of EL2 Distributions in LEC GaAs Si Materials : Semiconductors and Semiconductor Devices
- Optical Quenching of the Extrinsic Light Induced Enhanced Photocurrent in Semi-Insulating GaAs : Electrical Properties of Condensed Matter
- Defect Structures in InP Crystals by Laser Scanning Tomography
- Observation of Switching and Oscillation Phenomena in Forward Biased Ge-Ag Diodes
- SnO_2-Semi-Conductor Heterojunction. Electrical Properties of a Particular MOS Structure