Observation of Switching and Oscillation Phenomena in Forward Biased Ge-Ag Diodes

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概要

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• Coherent oscillations associated with the presence of a current controlled negative resistance C. C. N. R. in the I-V characteristics have been discovered in the forward biased Ge (N type : p>5Ω.cm)-Ag structures. These oscillations seem to be related to the presence of a resistive layer of perturbed germanium (due to a special preparation of the substrate) at the interface between germanium and silver. The oscillation frequency increases with the diode current I between two limits I_<th> and I_m These frequencies are strongly dependent on the temperature and on the incident light. The maximum oscillation frequencies obtained to date range from 100 kHz (T=293 K) to 10 MHz (T=77 K). The characteristic times of switching between the low and the high impedance states are presented here as well.

• 社団法人応用物理学会の論文
• 1976-03-05

著者

• Fillard J.

  Centre D' Etudes D' Electronique Des Solides (associe Au C. N. R. S.) Universite Des Siences Et Techniques Du Languedoc

• MANIFACIER J.

  Centre d' Etudes d' Electronique des Solides (associe au C. N. R. S.) Universite des Siences et Techniques du Languedoc

• Manifacier J.

  Centre D' Etudes D' Electronique Des Solides (associe Au C. N. R. S.) Universite Des Siences Et Techniques Du Languedoc

関連論文

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• Defect Structures in InP Crystals by Laser Scanning Tomography
• Observation of Switching and Oscillation Phenomena in Forward Biased Ge-Ag Diodes
• SnO_2-Semi-Conductor Heterojunction. Electrical Properties of a Particular MOS Structure

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