Optical Quenching of the Extrinsic Light Induced Enhanced Photocurrent in Semi-Insulating GaAs : Electrical Properties of Condensed Matter

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概要

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• The existence of an optically enhanced photocurrent was demonstrated to be associated with the creation of a metastable state in previous papers. Herein the optical recovery of the normal state is studied. A partial restoration of the initial situation (low photocurrent level) is obtained after illumination with photons of the As^+_<Ga> EPR signal quenching spectral range. The recovery is made throughout the valence band, as revealed by photoHall experiments. All that suggests that the As_<Ga> defect is involved in the optically enhanced photocurrent effect.

• 社団法人応用物理学会の論文
• 1988-10-20

著者

• Bonnafe J.

  C.e.m.(centre D'electronique De Montpellier) U.s.t.l. Pl. E. Bataillon

• JIMENEZ J.

  Dopto. Fisica de la Materia Condensada, Facultad de Ciencias

• ALVAREZ A.

  ETSII

• GONZALEZ M.

  ETSII

• de SAJA

  Dopto. Fisica de la Materia Condensada, Facultad de Ciencias

• De Saja

  Dopto. Fisica De La Materia Condensada Facultad De Ciencias

• Jimenez J.

  Dopto. Fisica De La Materia Condensada Facultad De Ciencias

関連論文

• The Role of EL2 Centres in Infra Red Images of Defects in GaAs Materials
• Image Analysis of EL2 Distributions in LEC GaAs Si Materials : Semiconductors and Semiconductor Devices
• Optical Quenching of the Extrinsic Light Induced Enhanced Photocurrent in Semi-Insulating GaAs : Electrical Properties of Condensed Matter
• Defect Structures in InP Crystals by Laser Scanning Tomography

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