In Situ Deoxidation of GaAs Substrates by HCl Gas

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概要

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• In situ chemical etching by HCl gas of GaAs {001} substrates for molecular beam epitaxy application has been studied by X-ray photoelectron spectroscopy. Oxide free surfaces are obtained for low HCl pressures (P〜0.1 Torr) at room temperature. The residual adsorbed chlorine is completely removed by annealing at 450℃ under vacuum and a reconstruction characteristic of a clean GaAs surface is then observed by low energy electron diffraction. Preliminary results of GaAs molecular beam epitaxial growth on such HCl-treated surfaces indicate a significant decrease of the morphological defects concentration in the layers.

• 社団法人応用物理学会の論文
• 1987-01-20

著者

• Massies Jean

  Laboratoire Physique Du Solide Et Energie Solaire C.n.r.s.

• CONTOUR Jean-Pierre

  Laboratoire de Physique du Solide et Energie Solaire, CNRS

• Contour Jean-pierre

  Laboratoire Physique Du Solide Et Energie Solaire C.n.r.s.

関連論文

• Effect of Arsenic Pressure on Donor and Acceptor Concentration in Si Doped MBE GaAs Layers
• A Chemical Etching Process to Obtain Clean InP {001} Surfaces
• In Situ Deoxidation of GaAs Substrates by HCl Gas

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