Effect of Arsenic Pressure on Donor and Acceptor Concentration in Si Doped MBE GaAs Layers

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概要

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• The influence of As/Ga flux ratio on the transport and optical properties of high purity Si-doped MBE GaAs has been investigated using two arsenic cells alternately or simultaneously. When the As produced from one cell increases by one order of magnitude, the 77 K Hall mobility decreases from 127000 to 75000 cm^2V^<-1>s^<-1> as the carrier concentration increases from 2.9×10^<14> to 1.1×10^<15> cm^<-3>. When two arsenic cells instead of a single one are used simultaneously at lower temperature, the Hall mobilities are around 10% lower for equivalent free carrier concentrations.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Neu Gerard

  Laboratoire De Physique Du Solide Et Energie Solaire Cnrs

• CHAIX Catherine

  Laboratoire de Physique du Solide et Energie Solaire, CNRS

• RADISSON Alain

  ISA Riber

• CONTOUR Jean-Pierre

  Laboratoire de Physique du Solide et Energie Solaire, CNRS

• Contour J‐p

  Laboratoire De Physique Du Solide Et Energie Solaire Cnrs

• Chaix Catherine

  Laboratoire De Physique Du Solide Et Energie Solaire Cnrs

関連論文

• Effect of Arsenic Pressure on Donor and Acceptor Concentration in Si Doped MBE GaAs Layers
• A Chemical Etching Process to Obtain Clean InP {001} Surfaces
• In Situ Deoxidation of GaAs Substrates by HCl Gas

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