Silicon Thin Film with Columnar Structure Formed by RF Diode Sputtering

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概要

• 論文の詳細を見る

• The morphology of amorphous silicon (a-Si) thin films prepared by rf diode sputtering was examined. The self-bias potential drops sharply with deceasing argon gas pressture below 30 mTorr and strongly influences the morphology of the sputtered a-Si films. In particular, a film deposited at a pressure of 20 mTorr has a very highly oriented columnar structure and each column has a dome-shaped top. The experimental results show that the self-bias potential is an important determinant of sputtered a-Si film microstrtucture.

• 社団法人応用物理学会の論文
• 1997-06-15

著者

• MESSIER Russel

  Materials Research Laboratory, The Pennsylvania State University

• Unagami Takashi

  Faculty Of Science And Engineering Teikyo University

• LOUSA Arturo

  Faculty of Physics, Barcelona University

• Messier Russel

  Material Research Laboratory The Pennsylvania State University

• Lousa Arturo

  Faculty Of Physics Barcelona University

関連論文

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• Rate Determing Step of Anodic Charge-Transfer Process during Porous Silicon Formation in HF Solution
• Silicon Thin Film with Columnar Structure Formed by RF Diode Sputtering

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