New Teclnnique for Fabrication of Two-Dimensional Photonic Bandgap Crystals by Selective Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-01
著者
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Hirayama H
Inst. Physical And Chemical Res. (riken) Saitama Jpn
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AOYAGI Yoshinobu
Institute of Physical and Chemical Research (RIKEN)
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Hirayama Hideki
Institute Of Physical And Chemical Research (riken)
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Aoyagi Yoshinobu
Institute Of Physical And Chemical Research
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Hirayama Hideki
Institute Of Physical And Chemical Research
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HAMANO Tetstuko
Institute of Physical and Chemical Research
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HAMANO Tetsuko
Institute of Physical and Chemical Research(RIKEN)
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Hamano Tetsuko
Institute of Physical and Chemical Research
関連論文
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- Fabrication of GaN Quantum Dots and Their Optical Properties
- Characterization of Small Superconducting Rings and Its Possible Application to New Single Flux Quantum Devices
- Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
- Liquid Phase Epitaxy Growth of m-Plane GaN Substrate Using the Na Flux Method
- Fabrication of a-Plane GaN Substrate Using the Sr-Na Flux Liquid Phase Epitaxy Technique
- New Teclnnique for Fabrication of Two-Dimensional Photonic Bandgap Crystals by Selective Epitaxy
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- Novel Radiation Pattern of Spontaneous Emission from Photonic Bandgap Crystal Cavity Laser
- Liquid Phase Epitaxy Growth of $m$-Plane GaN Substrate Using the Na Flux Method