Low-Threshold 1.3 μm Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-05-15

著者

• Asonen H.

  Tutcore Ltd.

• SAVOLAINEN Pekka

  Department of Physics, Tampere University of Technology

• TOIVONEN Mika

  Department of Physics, Tampere University of Technology

• ASONEN Harry

  Tutcore Ltd.

• MURISON Richard

  EG&G Optoelectronics Canada

• Toivonen Mika

  Department Of Physics Tampere University Of Technology

• Murison Richard

  Eg&g Optoelectronics

• Savolainen Pekka

  Department Of Physics Tampere University Of Technology

関連論文

• Low-Threshold 1.5 μm Quaternary Quantum Well Lasers Grown by Solid Source Molecular Beam Epitaxy
• Low-Threshold 1.3 μm Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy
• Incorporation of Group-V Elements in Ga_xIn_As_yP_ Layers Grown on GaAs by Gas-Source Molecular Beam Epitaxy
• High-Power, High-Efficiency GaInP/AlGaInP Laser Diode

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