Incorporation of Group-V Elements in Ga_xIn_<1-x>As_yP_<1-y> Layers Grown on GaAs by Gas-Source Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-08-01

著者

• Asonen H.

  Tutcore Ltd.

• ZHANG G.

  Department of Physics, Tampere University of Technology

• ASONEN H.

  Department of Physics, Tampere University of Technology

• PESSA M.

  Department of Physics, Tampere University of Technology

• Pessa M.

  Department Of Physics Tampere University Of Technology

関連論文

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• Low-Threshold 1.3 μm Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy
• Incorporation of Group-V Elements in Ga_xIn_As_yP_ Layers Grown on GaAs by Gas-Source Molecular Beam Epitaxy
• Lα Emission Spectra of Elements Z=40-48 : X-RAY EMISSION SPECTROSCOPY
• Streptococci Dominate the Diverse Flora within Buccal Cells

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