High-Power, High-Efficiency GaInP/AlGaInP Laser Diode

スポンサーリンク

概要

• 論文の詳細を見る

• We report on high-power ridge-waveguide GaInP/AlGaInP laser diodes emitting at the wavelength of 670 nm. These lasers, processed into 40×1,200 μm^2 shallow ridge waveguide structures, with anti-reflection/high-reflection mirror coatings exhibit the cw output powers in excess of 1.25W, when mounted p-side down on heat sinks. The maximum power is limited by the catastrophic optical damage at the front facet. When mounted p-side up, the maximum cw power is about 1W, which is thermally limited. The thermal roll-over tests show that the lasers are very robust.

• 社団法人応用物理学会の論文
• 1996-11-15

著者

• SAVOLAINEN Pekka

  Department of Physics, Tampere University of Technology

• Pessa Markus

  Department Of Physics Tampere University Of Technology

• Savolainen Pekka

  Department Of Physics Tampere University Of Technology

関連論文

• Low-Threshold 1.5 μm Quaternary Quantum Well Lasers Grown by Solid Source Molecular Beam Epitaxy
• Low-Threshold 1.3 μm Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy
• High-Power, High-Efficiency GaInP/AlGaInP Laser Diode

スポンサーリンク