Nanolithography Using Fullerene Films as an Electron Beam Resist

概要

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Electron beam (e-beam) irradiation has been found to reduce the dissolution rate of evaporated C_<60> films in organic solvents such as monochlorobenzene, which shows that this material acts as a negative e-beam resist with a sensitivity of 1×10^<-2> C/cm^2. It has higher dry-etch durability than conventional novolac resists. Its applicability to nanofabrication has been demonstrated by fabricating Si pillars of 20-30 nm diameter using electron cyclotron resonance microwave plasma etching and dot patterns defined in the C_<60> film as etching masks.
社団法人応用物理学会の論文
1996-01-01