A Quadrupole Ion Trap as Low-Energy Cluster Ion Beam Source

概要

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Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of ${\sim}2$ eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions SinHx+ were actually deposited on Si(111)-($7\times 7$) surfaces at impact kinetic energy $E_{\text{d}}$ of 3–30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si6Hx+ cluster ions landed on the surface without decomposition at $E_{\text{d}}=3$ eV, while the deposition was destructive at $E_{\text{d}}\geqq 18$ eV.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2003-02-15