Schottky Characteristics of Subhalf-Micron Gate GaAs Metal-Semiconductor Field-Effect Transistor

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概要

• 論文の詳細を見る

• This paper describes Schottky characteristics of the subhalf-micron W-Al gate GaAs metal-semiconductor field-effect transistor (MESFET), which is fabricated using the phase-shifting mask technology. We observed that Schottky characteristics depend on the gate length and gate direction especially in the subhalf-micron range. This phenomena is caused by the piezoelectric effect; however, the degree of the barrier height shift is small compared to that of the threshold voltage, and this can be explained by the depth profile of the induced charges under the gate of subhalf micron.

• 社団法人応用物理学会の論文
• 1993-02-01

著者

• KIMURA Tamotsu

  R & D Group, Oki Electric Incustry Co.,Ltd

• Kimura Tamotsu

  R & D Group Oki Electric Industry Co. Ltd.

• OHSHIMA Tomoyuki

  R & D Group, Oki Electric Industry Co., Ltd.

• Ohshima Tomoyuki

  R & D Group Oki Electric Industry Co. Ltd.

関連論文

• Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and its Application to GaAs MESFETs : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
• Asymmetric Implantation Self-alignment Technique for GaAs MESFETs : Semiconductors and Semiconductors Devices
• Schottky Characteristics of Subhalf-Micron Gate GaAs Metal-Semiconductor Field-Effect Transistor

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