Preparation of BiSrCaCuO Superconducting Thin Film by Molecular Beam Epitaxy with NO_2

概要

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A BiSrCaCuO superconducting thin film was prepared in situ by molecular beam epitaxy with nitric dioxide gas (NO_2). Metal sources were coevaporated onto the MgO (100) substrate at the substrate temperature of 〜700℃ under the background pressure of the growth chamber of 〜5×10^<-6>Torr. The deposition speed was 〜1.8 Å/s and the thickness of the thin film was 〜 3000 Å. The zero resistance was obtained at 65 K without the annealing steps. The quality of the BiSrCaCuO superconducting thin film prepared with NO_2 is comparable to that prepared with distilled ozone under identical growth condition except for the distilled ozone flux intensity. Oxidation behaviors of NO_2 were studied and are compared with those of distilled ozone.
社団法人応用物理学会の論文
1991-04-15