A New Interpretation of the Orientation Effect in GaAs Metal Semiconductor Field Effect Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-01
著者
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Tong Qin-yi
Microelectronics Center Southeast University
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Lu Shi-ji
Microelectronics Center Southeast University
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HUANG Qing-An
Microelectronics Center Southeast University
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Tong Qin-Yi
Microelectronics Center, Southeast University
関連論文
- Improvernent of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO_2
- A New Interpretation of the Orientation Effect in GaAs Metal Semiconductor Field Effect Transistors
- A Novel Surface-Site Model for the Oxide / Aqueous Electrolyte Interface
- Possible Current Oscillations in Field Emission from N-Type Silicon