Improvernent of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO_2

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-06-15

著者

• Tong Q‐y

  Duke Univ. Nc Usa

• Tong Qin-yi

  Microelectronics Center Southeast University

• Zhang Hui-zhen

  Microelectronics Center Southeast University

• Chen Jun-ning

  Microelectronics Center Southeast University

• HUANG Qing-An

  Microelectronics Center Southeast University

• Huang Q‐a

  Southeast Univ. Nanjing Chn

関連論文

• Improvernent of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO_2
• A New Interpretation of the Orientation Effect in GaAs Metal Semiconductor Field Effect Transistors
• A Novel Surface-Site Model for the Oxide / Aqueous Electrolyte Interface
• Possible Current Oscillations in Field Emission from N-Type Silicon

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