Possible Current Oscillations in Field Emission from N-Type Silicon

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概要

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• Band bending confines the electrons to a narrow surface potential well region during field emission from N-type silicon. This letter proposes a mechanism of electron tunneling both over the potential well and through the barrier, and estimates the emitted current. The current oscillation in field emission from N-type silicon is predicted for the first time.

• 社団法人応用物理学会の論文
• 1995-07-15

著者

• HUANG Qing-An

  Microelectronics Center Southeast University

関連論文

• Improvernent of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO_2
• A New Interpretation of the Orientation Effect in GaAs Metal Semiconductor Field Effect Transistors
• Possible Current Oscillations in Field Emission from N-Type Silicon

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