Surfactant Epitaxy of Si on Si(111) Mediated by Sn

スポンサーリンク

概要

• 論文の詳細を見る

• Surfactant epitaxy is studied by high-resolution reflection electron microscopy for the growth of Si on a Si(111) surface covered by a tin (Sn) layer. The growths on stepped surfaces occur chiefly by the step flow at substrate temperatures above ≃ 330℃. The Si atoms deposited on the Sn layer diffuse underneath the Sn layer to be incorporated with live bulk Si layer, so that the Sn layer is always located at the outermost surface to maintain the step flow as well. The growths with and without the Sn layer are studied comparatively to find an approximate relation, λ^2_c〜A exp (-E/kT_c), between the critical step distance for the step flow, λ_c, and the substrate temperature, T_c. The step flow for the Si/Sn/Si occurs at much lower temperature and at much longer step distance than for the Si/Si: at 330℃, λ_c≃1240 nm for Si/Sn/Si, and λ_c≃175 nm for Si/Si.

• 社団法人応用物理学会の論文
• 1991-11-15

著者

• Takayanagi Kunio

  Tokyo Institute Of Technology Material Science And Engineering

• Takayanagi Kunio

  Tokyo Institute Of Technology

• IWANARI Shun-ichi

  Tokyo Institute of Technology, Material Science and Engineering

• Iwanari Shun-ichi

  Tokyo Institute Of Technology Material Science And Engineering

関連論文

• Monolayer and Bilayer High Steps on Si(001)2×1 Vicinal Surface
• Atomic Resolution TEM Images of the Au(001) Reconstructed Surface
• An Ion-Sputtering Gun to Clean Crystal Surfaces In-Situ in an Ultra-High-Vacuum Electron Microscope
• Electron Beam Evaporator for In Situ Deposition Studies of Refractory Metal Thin Films in UHV Electron Microscope
• Contrast of Closely Spaced Misfit Dislocations
• On the Growth Feature of Sn Deposit on SnTe Substrate
• High-resolution ultrahigh-vacuum electron microscopy of helical gold nanowires : junction and thinning process
• Surfactant Epitaxy of Si on Si(111) Mediated by Sn

スポンサーリンク