Consideration on Mobility Lowering Phenomenon in PolySi Films Using Tunneling Barrier Height Images
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概要
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Polycrystalline silicon films were deposited on SiO_2, and arsenic tons were implanted into these films. The Hall and resistivity measurements show that the mobility lowering effect and the activity lowering effect dominate the electrical prop-erties of the films. Tunneling barrier height images also suggest carrier trapping at grain boundaries in lightly doped cases, indicating the possibility of arsenic segregation. These results indicate that the mechanism of the mobility loweringeffect is mainly governed by the carrier trapping at grain boundaries.
- 1990-08-20
著者
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Sagara Kazuhiko
Central Research Laboratory Hitachi Lid.
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Hosaka Sumio
Central Research Laboratory Hitachi Lid.
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HOSAKA Sumio
Central Research Laboratory, Hitachi, Lid.
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SAGARA Kazuhiko
Central Research Laboratory, Hitachi, Lid.
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