Ab Initio Study of Elementary Processes in Silicon Homoepitaxy : Adsorption and Diffusion on Si(001)

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概要

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• Ab initio total-energy calculations of the reconstructed Si(001) with adatoms for various adsorption sites have been performed. The results are interpreted in terms of adatom-substrate interactions to understand microscopic mechanisms of the surface diffusion of Si adatoms. The spatial variation of the adsorption energy suggests strong anisotropy in the direction of the adatom diffusion on Si(001) -the most probable direction of diffusion is along the dimer rows. The surface dimer breaks when the adatom moves along the lateral projection of the dimer bond.

• 社団法人応用物理学会の論文
• 1990-07-20

著者

• HIRAMOTO Hisashi

  Institute of Materials Science,University of Tsukuba

• Hiramoto Hisashi

  Institute Of Materials Science University Of Tsukuba

• Okazaki M

  Gunma Univ. Gunma

• MIYAZAKI Takehide

  Institute of Materials Science, University of Tsukuba

• OKAZAKI Makoto

  Institute of Materials Science, University of Tsukuba

• Miyazaki Takehide

  Institute Of Materials Science University Of Tsukuba

関連論文

• Dynamics of an Electron in Quasiperiodic Systems.II.Harper's Model
• Dynamics of an Electron in Quasiperiodic Systems.I.Fibonacci Model
• Ab Initio Study of Elementary Processes in Silicon Homoepitaxy : Adsorption and Diffusion on Si(001)
• A New Self-Consistent Band Structure of C_8K
• Screening of Coulomb Potential by 2-Dimensional Band Electrons in Intercalated Layered Materials
• Anomalous Quantum Diffusion in Quasiperiodic Potentials : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Metals and Semiconductors
• Molecular Dynamics Study of Model System for C_8K Type Compounds
• The Effect of an Interelectron Interaction on Electronic Properties in One-Dimensional Quasiperiodic Systems

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