A Model for SiN_x CVD Film Growth Mechanism by Using SiH_4 and NH_3 Source Gases

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概要

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• This paper theoretically explores the SiN_x CVD film growth mechanism by means of the ab initio molecular orbital method. In a chemical vapor deposition (CVD) reactor, an SiH_4 and NH_3 gas mixture produces silylenes (X-Si-Y: X and Y are substituents). The insertion of silylene into a surface Si-H or N-H bond is the important part of the CVD film growth mechanism. Following the insertion, H_2-elimination reaction occurs from the surface. The film growth mechanism explains Si-H and N-H bonds remaining ih an SiN_x film and the deviation from the stoichiometry. Based on the mechanism, it is suggested that a new source gas, SiNH_5, instead of SiH_4 deposits a stoichiometric SiN_x film, and that a transition layer exists between the native oxide and the bulk SiN_x film.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Ishitani Akihiko

  Vlsi Development Division Nec Corporation

• Koseki Shiro

  Nec Scientific Information System Development Lid.

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