Epitaxial Growth of Bi/Sb Superlattice
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概要
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The present work describes the heteroepitaxial growth at room temperature of a Bi/Sb superlattice film, for the first time, on a single-crystal cleaved BaF_2(111) substrate. Four peaks were observed in small-angle X-ray diffraction of the Bi/Sb superlattice film, denoting good periodicity. In situ reflection high-energy electron diffraction (RHEED) observations show epitaxial growth after 60 layers of superlattice deposition. Cross-sectional transmission electron microscopy (TEM) observations also show the single-crystal image and diffraction pattern.
- 社団法人応用物理学会の論文
- 1992-08-01
著者
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Takahashi Junzo
Research Institute For Metal Surface Of High Performance Ltd. C
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MIYAGAWA Tsugio
o Kawasaki Steel Corporation
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Miyagawa Tsugio
O Kawasaki Steel Corporation:(present Address) Electronic Materials And Components Research Laborato
関連論文
- Growth of Bi/Sb Superlattice
- Epitaxial Growth of Bi/Sb Superlattice
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