Deep-Level Transient Spectroscopy of Interface States in ZnO/PrCoO_x/ZnO Thin-Film Junctions
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-10-01
著者
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SHIRAKAWA Yusuke
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Yano Yoshihiko
R&d Center Tdk Corporation
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Shirakawa Y
Shizuoka Univ. Hamamatsu Jpn
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YANO Yoshihiko
R&D Center, TDK Corporation
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SHIRAKAWA Yukihiko
R&D Center, TDK Corporation
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MOROOKA Hisao
R&D Center, TDK Corporation
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Shirakawa Yusuke
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Morooka Hisao
R&d Center Tdk Corporation
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Shirakawa Y
Tdk Corp. Chiba
関連論文
- Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing BaF_2 Insulator Film
- Deep-Level Transient Spectroscopy of Interface States in ZnO/PrCoO_x/ZnO Thin-Film Junctions
- Electrical Properties of Al/CaF_2/i-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh Vacuum Process