Device Quality SiO_2 Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-10-01
著者
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Jiang Nan
Institut Universitaire De Technologie Universite De Paris Sud (xi)
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Puech Michel
Alcatel Sdg
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PLAIS Francois
THOMSON-CSF, LCR
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PRIBAT Didier
THOMSON-CSF, LCR
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HUGON Marie-Christine
Institut Universitaire de Technologie, Universite de Paris Sud (XI)
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AGIUS Bernard
Institut Universitaire de Technologie, Universite de Paris Sud (XI)
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KRETZ Thierry
Thomson-CSF LCR, Domaine de Corbeville
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CARRIERE Thierry
Matra Marconi Space
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Kretz Thierry
Thomson-csf Lcr
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Pribat D
Thomson‐csf Orsay Fra
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Pribat Didier
Thomson-csf Lcr
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Agius Bernard
Institut Universitaire De Technologie Universite De Paris Sud (xi)
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Plais F
Thomson‐csf Orsay Fra
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Plais Francois
Thomson-csf Lcr
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Hugon Marie-christine
Institut Universitaire De Technologie Universite De Paris Sud (xi)
関連論文
- Kinetics of Interface State Generation Induced by Hot Carriers in N-Channel Polycrystalline Silicon Thin-Film Transistors
- Device Quality SiO_2 Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating
- Kinetics of Crystallization of Amorphous and Mixed-Phase Silicon Films Deposited by Pyrolysis of Disilane Gas at Very Low Pressure
- Kinetics of Interface State Generation Induced by Hot Carriers in N-Channel Polycrystalline Silicon Thin-Film Transistors
- Lasiodiplodin Analogues from the Endophytic Fungus Sarocladium kiliense