Kinetics of Interface State Generation Induced by Hot Carriers in N-Channel Polycrystalline Silicon Thin-Film Transistors

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Fortunato Guglielmo

  Iess-cnr

• Policicchio Irma

  Iess-cnr

• PECORA Alessandro

  IESS-CNR

• PLAIS Francois

  THOMSON-CSF, LCR

• PRIBAT Didier

  THOMSON-CSF, LCR

関連論文

• Kinetics of Interface State Generation Induced by Hot Carriers in N-Channel Polycrystalline Silicon Thin-Film Transistors
• Device Quality SiO_2 Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating
• Kinetics of Interface State Generation Induced by Hot Carriers in N-Channel Polycrystalline Silicon Thin-Film Transistors

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