Kinetics of Crystallization of Amorphous and Mixed-Phase Silicon Films Deposited by Pyrolysis of Disilane Gas at Very Low Pressure

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概要

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• The kinetics of crystallization of high-purity amorphous and mixed-phase silicon films obtained by pyrolysis of disilane gas in the millitorr pressure range were studied. A combination of in situ electrical conductance measurements and transmission electron microscopy analysis was used to determine the crystallization parameters. For mixed-phase films we report an activation energy for the nucleation rate of the order of 2.9 eV, compared to approximately 3.7 eV for the completely amorphous ones; the activation energy for the growth rate is roughly equal to 2.7 eV for the two types of films analyzed.

• 社団法人応用物理学会の論文
• 1995-06-01

著者

• Kretz Thierry

  Thomson-csf Lcr

• Pribat D

  Thomson‐csf Orsay Fra

• Pribat Didier

  Thomson-csf Lcr

• Plais F

  Thomson‐csf Orsay Fra

• Plais Francois

  Thomson-csf Lcr

• LEGAGNEUX Pierre

  Thomson-CSF LCR

• HUET Odile

  Thomson-CSF LCR

• BISARO Renato

  Thomson-CSF LCR

• Legagneux P

  Thomson-csf Lcr

関連論文

• Device Quality SiO_2 Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating
• Kinetics of Crystallization of Amorphous and Mixed-Phase Silicon Films Deposited by Pyrolysis of Disilane Gas at Very Low Pressure
• Kinetics of Interface State Generation Induced by Hot Carriers in N-Channel Polycrystalline Silicon Thin-Film Transistors

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