Raman Spectroscopic Study of Nb/AlO_x-Al/Nb Josephson Junctions

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概要

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• We have studied the AlO_x barrier composition of niobium (Nb) Josephson junctions with a Nb/AlO_x-Al/Nb structure using Raman spectroscopy at 10 K. We have observed both Al-O and Al-OH modes of an AlO_x barrier with a few nm thickness in the Raman spectra through Nb counter electrode. For a structure annealed at 3O0℃ the AlO mode intensity increases and the Al-OH mode intensity decreases. This contributes to a change in the critical current of the junction after annealing.

• 社団法人応用物理学会の論文
• 1994-02-01

著者

• Morohashi Shin'ichi

  Fujitsu Laboratories Ltd.

関連論文

• Raman Spectroscopic Study of Nb/AlO_x-Al/Nb Josephson Junctions
• Interfacial Study of Nb Josephson Junctions with Overlayer Structure (Special Section on Superconducting Devices)
• Ta/W/AlO_x-Al/Ta/Nb Josephson Junctions for X-Ray Detector

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