Improvements of the Optical and Electrical Properties of GaN Films by Using In-doping Method During Growth
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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AOYAGI Yoshinobu
Semiconductor Laboratory, RIKEN, The Institute for Physical and Chemical Research
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Aoyagi Yoshinobu
Semiconductor Research Laboratory The Institute Of Physical And Chemical Research (riken)
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Aoyagi Yoshinobu
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Shen Xu-qiang
Semiconductor Research Laboratory The Institute Of Physical And Chemical Research (riken)
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Ramvall Peter
Semiconductor Research Laboratory The Institute Of Physical And Chemical Research (riken)
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Riblet Philippe
Semiconductor Research Laboratory The Institute Of Physical And Chemical Research (riken)
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SHEN Xu-Qiang
Semiconductor Research Laboratory, The Institute of Physical and Chemical Research (RIKEN):(Present address)Material Science Division, Electrotechnical Laboratory
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RIBLET Philippe
Semiconductor Research Laboratory, The Institute of Physical and Chemical Research (RIKEN)
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RAMVALL Peter
Semiconductor Research Laboratory, The Institute of Physical and Chemical Research (RIKEN)
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