Effect of Thermal Annealing on the Pd/Au Contact to P-Type Al_<0.15>Ga_<0.85>N : Short Note
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概要
- 論文の詳細を見る
The Pd (35nm)/Au (100nm) contact scheme is used directly on p-type Al_<0.15>Ga_<0.85>N (Na 〓 6 × 10^16cm^3) for ultraviolet laser diodes or other device applications. The linear current-voltage curve was observed after annealing at 700℃ for 2min in N_2 ambient. The reduction of effective Schottky burier height by annealing is considered to be due to Ga and Al vacancies acting as acceptors and N preservation at the metal-semiconductor interface. The outdiffusion of Ga and Al to air is observed by Auger electron spectroscopy analysis. [DOI: 10.1143/JJAP.41.581]
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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Aoyagi Yoshinobu
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Aoyagi Yoshinobu
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Hirayama Hideki
Semiconductors Laboratory The Institute Of Physical And Chemical Research (riken)
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Jun Byung-hyuk
Semiconductors Laboratory The Institute Of Physical And Chemical Research (riken)
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