An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides

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概要

• 論文の詳細を見る

• We have fabricated and investigated the fundamental electron transport properties of a two-terminal tunnel diode, which consisted of a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometer-scale oxides locally generated by using an atomic force microscope (AFM). The AFM-generated oxides were adopted successfully as integral tunnel barriers for electron transport, and single electron transport and Coulomb blockade regimes were observed in a quantum dot tunnel diode structure.

• 社団法人応用物理学会の論文
• 1999-02-15

著者

• Okada Yoshitaka

  University Of Tsukuba Institute Of Materials Science

• Harris James

  Stanford University Department Of Electrical Engineering

• IUCHI Yoshimasa

  University of Tsukuba, Institute of Materials Science

• KAWABE Mitsuo

  University of Tsukuba, Institute of Materials Science

• Iuchi Yoshimasa

  University Of Tsukuba Institute Of Materials Science

• Kawabe Mitsuo

  University Of Tsukuba Institute Of Materials Science

• Jr. Jr.

  Stanford University, Department of Electrical Engineering, Stanford, California 94305-4075, U.S.A.

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• Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
• An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides

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