Effect of Boundary Layer Thickness on the Photoluminescence Spectra of GaAs Grown by MOCVD
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概要
- 論文の詳細を見る
Undoped GaAs epitaxial layers were grown by atmospheric MOCVD. The longitudinal distributions of photoluminescence spectra of these layers were studied. Mn, Cu, Si and C were found. The boundary layer thickness, which was expected to develop on a heated substrate, showed no influence on the intensities of these metal impurities. The doping coefficient of the metal impurities may be unrelated to the boundary layer thickness. Where the boundary layer was thin, it was observed that a larger amount of carbon was incorporated in the epitaxial layers. Compared with a growth simulation, it is pointed out that the amount of the residual metalorganic gas which remained at the substrate surface is one of the significant factors regarding carbon incorporation.
- 社団法人応用物理学会の論文
- 1986-12-20
著者
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SUZUKI MOTOYUKI
Institute of Industrial Science, University of Tokyo
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Suzuki Motoyuki
Institute Of Industrial Science University Of Tokyo
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SATO Michio
Institute of Industrial Science, University of Tokyo
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Sato Michio
Institute Of Industrial Science University Of Tokyo
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Sato Michio
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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