Properties of Passivating Silicon Oxide Films due to HF-NO_2 Gas Reaction

概要

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A microcrystalline silicon film is formed on monocrystalline silicon by a staining reaction in a gaseous mixture of HF and NO_2, and the film is then oxidized at 100℃〜500℃. The oxide thickness depends upon the oxidation temperature, although almost all of the oxidation is completed in the first few minutes. It is also found that the unoxidized thickness left between the oxide and the silicon substrate is important in stabilizing the surface. The most suitable oxidation temperature for the device passivation is 200℃〜250℃. The low-temperature oxidation mechanism and the physical properties of the films are discussed.
社団法人応用物理学会の論文
1983-08-20