Properties of Passivation Film on Silicon due to HF-NO_2 Mixed Gas Reaction

概要

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The properties and formation mechanism of a surface passivation film on silicon are discussed. The film is produced by a staining reaction in a mixed HF-NO_2 gas, followed by a subsequent low temperature oxidation. It is found that the stain film formation reaction is accompanied by the surface etching reaction. From experiments by varying the composition of the mixed gas and conditions of the treatment, it is found that particularly NO_2 gas component has an important bearing on the film forming and etching reactions. These reactions are independent of the conductivity type or the specific resistivity of the silicon. The present surface passivating film results in surface stabilization of silicon devices by having high breakdown voltage.
社団法人応用物理学会の論文
1983-04-20