Electronic Properties of Vapor-Grown Heteroepitaxial ZnO Film on Sapphire
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概要
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Hall coefficient and resistivity measurements have been made on single-crystal ZnO films prepared by chemical vapor deposition on sapphire substrates from 4.2 K to 300 K. Successive reduction of the film thickness from the surface and the rear (interface to substrate) revealed that there are two regions - a bulk region and an interfacial region adjacent to the substrate. At the interfacial region, the carrier density is assumed to be very high and impurity-band conduction takes place. The dependence of the mean resistivity and the mean carrier density on the film thickness and temperature are described well by the two-layer and two-band model.
- 社団法人応用物理学会の論文
- 1983-05-20
著者
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Kasuga Masanobu
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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OGAWA Shinzi
Department of Electronics, Faculty of Engineering, Yamanashi University
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Ogawa Shinzi
Department Of Electronics Faculty Of Engineering Yamanashi University
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