Trichloride Vapour Phase Epitaxial Growth of In_<1-x>Ga_xAs on InP Using an In / Ga Alloy Source : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
In this paper, we report on the In_<1-x>Ga_xAs epitaxial layer growth on InP using a Ga/In alloyed source. Lattice-matched In_<1-x>Ga_xAs can be grown using an In/Ga alloy for 5-9% at. Ga. The influence of different parameters (source and deposition temperatures, the source stoichiometry and the input AsCl_3 mole fraction) on the In stoichiometry has been studied in order to obtain the desired stoichiometry within a certain range.
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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AGUILAR M.
Departamento de Instrumentacion Electronica, E.T.S. Ingenieros de Telecomunicacion-U.P.M., Ciudad Un
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Abril E.
Departamento De Instrumentacion Electronica E.t.s. Ingenieros De Telecomunication-u.p.m. Ciudad Univ
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Coronado M.
Departamento De Instrumentacion Electronica E.t.s. Ingenieros De Telecomunication-u.p.m. Ciudad Univ
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BALAGUER R.
Departamento de Instrumentacion Electronica, E.T.S. Ingenieros de Telecomunication-U.P.M., Ciudad Un
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Balaguer R.
Departamento De Instrumentacion Electronica E.t.s. Ingenieros De Telecomunication-u.p.m. Ciudad Univ
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Aguilar M.
Departamento De Instrumentacion Electronica E.t.s. Ingenieros De Telecomunication-u.p.m. Ciudad Univ
関連論文
- Growth of Epitaxial Layers of In Doping GaAs by the Vapour-Phase Epitaxial Trichloride Method Using a Gallium-Indium Alloyed Source
- Indium Isoelectronic Doping Influence on Etch Pit Density in GaAs Layers Grown by Vapour Phase Epitaxy
- Trichloride Vapour Phase Epitaxial Growth of In_Ga_xAs on InP Using an In / Ga Alloy Source : Semiconductors and Semiconductor Devices