Influence of Manganese on the Room-Temperature Resistivity of Lanthanum-Doped BaTiO_3
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概要
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The room-temperature resistivity of La-doped BaTiO_3 increases with the increased In content. Some of the doped Mn ions will segregate at the grain boundaries and behave as acceptor levels. Thus, In will exihibit a grain growth inhibition effect which results in the increase of grain boundaries. Then, the surface charge density (N_s) will be increased by the little doped Mu ions and result in a decreased effective donor concentration (N_<eff>) and an enhanced barrier height at the grain boundaries. Thus, the semiconductivity of La-doped BaTiO_3 is decreased by Mn addition.
- 社団法人応用物理学会の論文
- 1996-05-15
著者
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CHEN Ying-Chung
Institute of Electrical Engineering, National Sun Yat-Sen University
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Lo Gun-Man
Institute of Electrical Engineering, National Sun Yat-Sen University
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Lo Gun-man
Institute Of Electrical Engineering National Sun Yat-sen University
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Chen Ying-chung
Institute Of Electrical Engineering National Sun Yat-sen University
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Su Ming-yuan
Institute Of Electrical Engineering National Sun Yat-sen University
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