Influence of Manganese on the Room-Temperature Resistivity of Lanthanum-Doped BaTiO_3

概要

論文の詳細を見る
The room-temperature resistivity of La-doped BaTiO_3 increases with the increased In content. Some of the doped Mn ions will segregate at the grain boundaries and behave as acceptor levels. Thus, In will exihibit a grain growth inhibition effect which results in the increase of grain boundaries. Then, the surface charge density (N_s) will be increased by the little doped Mu ions and result in a decreased effective donor concentration (N_<eff>) and an enhanced barrier height at the grain boundaries. Thus, the semiconductivity of La-doped BaTiO_3 is decreased by Mn addition.
社団法人応用物理学会の論文
1996-05-15