An Analytical Velocity Overshoot Model for 0.1 μm N-Channel Metal-Oxide-Silicon Devices Considering Energy Transport
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-05-15
著者
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Chen Yu-guang
Department Of Electrical Engineering National Taiwan University
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KUO James
Department of Electrical Engineering, National Taiwan University
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CHANG Yao-Wen
Department of Electrical Engineering, National Taiwan University
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Chang Yao-wen
Department Of Electrical Engineering National Taiwan University
-
Kuo James
Department Of Electrical Engineering National Taiwan University
関連論文
- Concise Analytical Model for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices with Consideration of Energy Transport
- An Analytical Velocity Overshoot Model for 0.1 μm N-Channel Metal-Oxide-Silicon Devices Considering Energy Transport
- Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film
- A Closed-Form Physical Drain Current Model Considering Energy Balance Equation and Source Resistance for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices